Samsung introduces its new ultra-fast UFS 4.0 flash storage technology

Samsung has just unveiled the outlines of its new version of universal flash storage (UFS). For the tech giant, it’s simple: this new UFS 4.0 storage is the UFS memory unit, based on Samsung’s 7th generation V-NAND, which is already “the best performing” in the sector.

In detail, this will be carried by UFS 4.0 modules with maximum dimensions of 11 mm x 13 mm x 1 mm and will be available in several capacities up to 1 TB. Samsung plans to start mass production in the third quarter. 2022.

Samsung’s UFS 4.0 promises sequential read speeds of up to 4,200MB/s and sequential write speeds of up to 2,800MB/s – roughly double the speeds of the published UFS 3.1 specification in January 2020. UFS specification body JEDEC’s board of directors has approved Samsung’s UFS 4.0 implementation, according to Samsung, which will sell UFS 4.0 memory to the mobile industry as part of of its transition to 5G. JEDEC has not yet published the UFS 4.0 specification.

Increased speeds

“UFS 4.0 delivers speeds of up to 23.2 Gbps per lane, double that of previous UFS 3.1. This amount of bandwidth is perfect for 5G smartphones that require massive amounts of data processing. data, and should also be adopted in future automotive, AR, and VR applications as well,” Samsung argues.

The South Korean giant indicates that with this technology, the autonomy of the phones could be extended, since the UFS 4.0 memory is 46% more efficient than the UFS 3.1 memory under the test conditions, with a sequential read speed up to 6.0 MB/s per milliampere (mA).

Samsung’s UFS 4.0 will include an ‘advanced’ Replay Protected Memory Block (RPMB), a protocol for eMMC, UFS and NVMe flash storage on mobile devices, intended to protect applications such as digital wallets from attacks by replay. RPMB protects memory partitions by requiring authentication for read and write access. According to Samsung, RPMB’s UFS 4.0 design is 1.8 times more efficient at storing confidential files.


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